The CGHV40030 from MACOM is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT), that operates from DC to 6 GHz. It provides up to 30 W of output power with 70% efficiency at Psat. The transistor operates on a 50-volt rail circuit and is housed in a 2-lead flange or pill package. The CGHV40030 is ideal for L, S and C Band applications.
