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CGHV40100

RF Transistor by MACOM (309 more products)
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The CGHV40100 from MACOM is a 100 W GaN HEMT transistor that operates from DC to 3 GHz. It provides 100 W of output power with 55% efficiency and requires a 50 V DC Supply to operate. The transistor is available with a 2 Lead flange package or in a pill package. It can be used in broadband amplifiers, data links & tactical data links, Milcom and Radar applications.

Product Specifications

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Product Details

  • Part Number
    CGHV40100
  • Manufacturer
    MACOM
  • Description
    100-W, DC CGHV40100 3-GHz, 50-V, GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    General Purpose
  • CW/Pulse
    Pulse
  • Frequency
    DC to 3 GHz
  • Power
    50.64 dBm
  • Power(W)
    115.88 W
  • Saturated Power
    50.64 dBm
  • Small Signal Gain
    11 to 17.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.54
  • Drain Current
    0.6 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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