The CGHV40200PP from MACOM is an unmatched, gallium-nitride (GaN) on Silicon Carbide (Sic) high-electron-mobility transistor (HEMT) that provides 250 watts of power from DC to 2 GHz. The transistor has 67 % Efficiency at PSAT and requires a 50-volt rail. It is available in a 4-lead flange package. This GaN on SiC HEMT ideal for general-purpose, broadband RF and microwave applications.
