CGHV59350

RF Transistor by MACOM (309 more products)

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CGHV59350 Image

The CGHV59350 is high power GaN HEMT that operates from 5.2 GHz to 5.9 GHz and meets TWT Radar System power requirements. GaN-based solid-state amplifiers operating at 50 V are not prone to the failure mechanisms seen with high-voltage (kV) TWT power supplies, thus providing longer lifetimes. The amplifier provides a pulsed saturated power performance greater than 350 watts, with 60% drain efficiency, matched to 50 ohms and packaged in an industry-standard 0.7 x 0.9 ceramic/metal flange package. This GaN HEMT is ideal for use in ground-based defense and Doppler weather radar systems.

Product Specifications

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Product Details

  • Part Number
    CGHV59350
  • Manufacturer
    MACOM
  • Description
    350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    5.2 to 5.9 GHz
  • Power
    54.8 to 56.98 dBm
  • Power(W)
    498.88 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    10.5 to 11 dB
  • VSWR
    5.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    1 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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