CGHV59350

RF Transistor by MACOM (310 more products)

Note : Your request will be directed to MACOM.

CGHV59350 Image

The CGHV59350 is high power GaN HEMT that operates from 5.2 GHz to 5.9 GHz and meets TWT Radar System power requirements. GaN-based solid-state amplifiers operating at 50 V are not prone to the failure mechanisms seen with high-voltage (kV) TWT power supplies, thus providing longer lifetimes. The amplifier provides a pulsed saturated power performance greater than 350 watts, with 60% drain efficiency, matched to 50 ohms and packaged in an industry-standard 0.7 x 0.9 ceramic/metal flange package. This GaN HEMT is ideal for use in ground-based defense and Doppler weather radar systems.

Product Specifications

View similar products

Product Details

  • Part Number
    CGHV59350
  • Manufacturer
    MACOM
  • Description
    350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    5.2 to 5.9 GHz
  • Power
    54.8 to 56.98 dBm
  • Power(W)
    498.88 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    10.5 to 11 dB
  • VSWR
    5.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    1 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents