The CGHV96050F1 from MACOM is a GaN-on-SiC HEMT that operates from 7.9 to 8.4 GHz. It provides an output power of 80 watts with a gain of over 13 dB and a PAE of 33%. The device has a pulse width of 100 µs and a duty cycle of 10%. This HEMT is available in a metal/ceramic flanged package for optimal electrical and thermal performance and is ideal for satellite communication and terrestrial broadband applications.
