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  6. MRF8P9040GN

The MRF8P9040GN from NXP Semiconductors is a RF Transistor with Frequency 728 to 960 MHz, Power 36.02 dBm, Power(W) 4 W, P1dB 46.2 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MRF8P9040GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF8P9040GN
  • Manufacturer
    NXP Semiconductors
  • Description
    CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    CDMA, WCDMA, LTE, Base Station, Cellular
  • CW/Pulse
    Pulse, CW
  • Frequency
    728 to 960 MHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • CW Power
    4 W
  • P1dB
    46.2 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    17.5 to 20.5 dB
  • Input Return Loss
    -13 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.1989
  • Drain Current
    320 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.5 °C/W
  • Package Type
    Flanged
  • Package
    CASE 1487--05, STYLE 1 TO--270 WB--4 GULL PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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