The CGHV96100F2 from MACOM is a High-Electron-Mobility Transistor (HEMT) that operates from 8.4 to 9.6 GHz. It delivers an output power of more than 145 W with a power gain of 10.2 dB and has an efficiency of 45%. This transistor is manufactured on a gallium-nitride (GaN)-on-silicon carbide (SiC) process and exhibits superior electrical characteristics compared to silicon or gallium arsenide such as higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. It requires a DC supply of 40 V and consumes 1000 mA of current. The transistor is available in a ceramic/metal flanged surface-mount package that measures 0.95 x 0.906 x 0.198 inches and is ideal for marine radar, weather monitoring, air traffic control, maritime vessel traffic control, and port security applications.
