CMPA0530002S

RF Transistor by MACOM (309 more products)

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The CMPA0530002S from MACOM is a GaN HEMT Power Amplifier that operates from 0.5 to 3 GHz. It provides a saturated output power of up to 2.9 W with a small signal gain of over 18 dB and has a PAE of up to 56.2%. The amplifier requires a DC Supply of 28 V. It is available in a surface-mount DFN package that measures 3 x 4 mm. This amplifier has been designed specifically for high efficiency, high gain, and wide bandwidth applications including ISM, EW, broadband amplifiers, and civil & military applications.

Product Specifications

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Product Details

  • Part Number
    CMPA0530002S
  • Manufacturer
    MACOM
  • Description
    2.9 W GaN HEMT Power Amplifier from 0.5 to 3 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    ISM, Radar, Military
  • Application
    Amplifiers, Electronic Warfare, Radar, ISM Band
  • CW/Pulse
    CW
  • Frequency
    0.5 to 3 GHz
  • Power
    33.01 to 34.62 dBm
  • Power(W)
    2 to 2.9 W
  • Small Signal Gain
    16.4 to 18.30 dB
  • Power Gain (Gp)
    12.97 to 13.26 dB
  • Power Added Effeciency
    46 to 56.2 %
  • Input Return Loss
    19.3 dB
  • VSWR
    10:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.6 to -2.4 V
  • Input Power
    21.5 dBm
  • Breakdown Voltage - Drain-Source
    84 V
  • Current
    90 mA
  • Drain Efficiency
    0.52
  • Drain Current
    0.58 to 0.8 A
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount
  • Package
    Dual-Flat-No-Lead (DFN)
  • Dimension
    0.118 x 0.157 x 0.033 inches
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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