GTRA184602FC-V1

RF Transistor by MACOM (309 more products)

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The GTRA184602FC from MACOM is a GaN Power Amplifier that operates from 1805 to 1880 MHz. It delivers an output power of 460 W (P3dB) with a gain of more than 14 dB and has an efficiency of 62%. This HEMT based amplifier requires a supply voltage of 48 V and draws 150 mA of current. It has a pulse width of 16 µs and a duty cycle of 10%. This amplifier is available in a thermally enhanced package that measures 20.57 x 9.78 x 3.78 mm with earless flange and is designed for multi-standard cellular power amplification.

Product Specifications

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Product Details

  • Part Number
    GTRA184602FC-V1
  • Manufacturer
    MACOM
  • Description
    460 W GaN Power Amplifier from 1805 to 1880 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    1805 to 1880 MHz
  • Power
    52.04 to 56.63 dBm (P3dB)
  • Power(W)
    160 to 460 W (P3dB)
  • Pulsed Width
    16 us
  • Duty_Cycle
    10 %
  • Gain
    14 to 15.5 dB
  • VSWR
    10:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    - 3.8 to - 2.3 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Current
    150 mA
  • Drain Leakage Current (Id)
    5.5 mA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • Package
    H-37248C-4
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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