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GTRA262802FC

RF Transistor by MACOM (309 more products)
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The GTRA262802FC from MACOM is a GaN on SiC HEMT that operates from 2490 to 2690 MHz. It provides an output power (P3dB) of 250 Watts with a gain of 14.4 dB and an efficiency of 62 %. The transistor requires a supply of 48 V. This pulsed device has a pulse width of 16 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard cellular power amplifier and telecom applications.

Product Specifications

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Product Details

  • Part Number
    GTRA262802FC
  • Manufacturer
    MACOM
  • Description
    250 Watts GaN on SiC HEMT from 2490 to 2690 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    3G / WCDMA, Cellular
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.49 to 2.69 GHz
  • Power
    53.98 dBm
  • Power(W)
    250 W
  • Pulsed Width
    16 uS
  • Duty_Cycle
    10%
  • Gain
    13.5 to 14 dB
  • Power Added Effeciency
    62%
  • VSWR
    1.10:1
  • Class
    Class 1A, Class AB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.5 to -2.5 V (Gate)
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Leakage Current (Id)
    5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Earless Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Operating Voltage : 0 to 55 V, Gate Quiescent Voltage : -3 V, Adjacent Channel Power Ratio : -28 to -24.5 dBc

Technical Documents
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