The GTRA262802FC from MACOM is a GaN on SiC HEMT that operates from 2490 to 2690 MHz. It provides an output power (P3dB) of 250 Watts with a gain of 14.4 dB and an efficiency of 62 %. The transistor requires a supply of 48 V. This pulsed device has a pulse width of 16 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard cellular power amplifier and telecom applications.
