The GTRA263902FC-V2 from MACOM is a GaN on SiC HEMT that operates from 2495 to 2690 MHz. It provides an output power (P3dB) of 370 Watts with a gain of 15 dB and an efficiency of 70 %. This pulsed device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard cellular power amplifiers and telecom applications. The transistor requires a 48 V supply.
