The GTRA364002FC-V1 from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 3.4 to 3.6 GHz. It provides an output power of 400 W and a gain of 13 dB while operating from 48 V supply. This Pulsed CW device is available in a thermally-enhanced surface mount package with earless flange and is ideal for use in multi-standard cellular power amplifier applications.
