GTRA384802FC

RF Transistor by MACOM (309 more products)

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The GTRA384802FC from MACOM is a high power GaN on SiC HEMT transistor that operates from 3600 to 3800 MHz. It provides an output power up to 400 W with gain of 13.7 dB and efficiency of 62%. The transistor requires a 48 V power supply and is available in a thermally enhanced package with earless flange. It is ideal for multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTRA384802FC
  • Manufacturer
    MACOM
  • Description
    400 W, 3600 to 3800 MHz GaN MMIC HEMT for Cellular Power Amplifier Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    WCDMA
  • Application
    3G / WCDMA, 5G, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    3.6 to 3.8 GHz
  • Power
    56.02 dBm
  • Power(W)
    400 W
  • Power Gain (Gp)
    13.7 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3 V
  • Drain Gate Voltage
    -3
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    125 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    0.44
  • Drain Current
    9.5 to 13.5 A
  • Drain Bias Current
    -3
  • Drain Leakage Current (Id)
    5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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