The GTRB097152FC-V1 from MACOM is a High-Electron-Mobility Transistor (HEMT) that operates from 758 to 960 MHz. It delivers an output power of 450 W (P3dB) with a gain of 18 dB and has an efficiency of 59%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and requires a DC supply of 48 V. It is available in a thermally-enhanced surface-mount package with earless flange for high efficiency. The transistor is ideal for multi-standard cellular power amplifier applications.
