The GTRB264318FC from MACOM is a GaN on SiC HEMT that operates from 2500 to 2700 MHz. It provides an output power (P3dB) of 400 W with a gain of 15 dB and an efficiency of 53%. The transistor requires a supply of 48 V. This pulsed device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for multi-standard cellular power amplifier applications.
