The GTVA104001FA-V1 from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 960 to 1215 MHz. It provides an output power of 400 W and a gain of 19 dB while operating from 50 V supply. This Pulsed CW device has a pulse width 128 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.
