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MRF150

RF Transistor by MACOM (309 more products)
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The MRF150 from MACOM is a RF Transistor with Frequency 5 to 150 MHz, Power 51.76 dBm, Power(W) 149.97 W, Gain 17 dB, Power Gain (Gp) 8 to 17 dB. Tags: Flanged. More details for MRF150 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF150
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM, Avionics
  • Application
    Communication System, Radar, ISM Band
  • CW/Pulse
    CW
  • Frequency
    5 to 150 MHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • Gain
    17 dB
  • Power Gain (Gp)
    8 to 17 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 5 Vdc
  • Drain Gate Voltage
    125 Vdc
  • Breakdown Voltage - Drain-Source
    125 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Drain Efficiency
    0.45
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flanged
  • Package
    Flange Ceramic

Technical Documents
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