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The NPT2022 is a GaN Transistor in a plastic package that operates from DC to 2 GHz. It supports CW, pulsed and linear operation, with output levels up to 100 W (50 dBm). It provides customers 20 dB of gain and 60% drain efficiency at 900 MHz.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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