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NPTB00025AB

RF Transistor by MACOM (309 more products)
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The NPTB00025AB from MACOM is a RF Transistor with Frequency DC to 4 GHz, Power 40 to 43.97 dBm, Power(W) 24.95 W, P1dB 42.5 to 43.2 dBm, Gain 13 dB. Tags: Flanged. More details for NPTB00025AB can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPTB00025AB
  • Manufacturer
    MACOM
  • Description
    Gallium Nitride 28V, 25W RF Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 4 GHz
  • Power
    40 to 43.97 dBm
  • Power(W)
    24.95 W
  • P1dB
    42.5 to 43.2 dBm
  • Gain
    13 dB
  • Small Signal Gain
    12.5 to 13.5 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Flanged
  • Package
    Flange Ceramic
  • RoHS
    Yes

Technical Documents
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