PH2226-110M

RF Transistor by MACOM (309 more products)

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PH2226-110M Image

The PH2226-110M from MACOM is a RF Transistor with Frequency 2.2 to 2.6 GHz, Power 50.41 dBm, Power(W) 109.9 W, Duty_Cycle 0.1, Gain 8 dB. Tags: Flanged. More details for PH2226-110M can be seen below.

Product Specifications

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Product Details

  • Part Number
    PH2226-110M
  • Manufacturer
    MACOM
  • Description
    Si Based Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, ISM, Radar
  • Application
    ISM Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.2 to 2.6 GHz
  • Power
    50.41 dBm
  • Power(W)
    109.9 W
  • Pulsed Power
    110 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    8 dB
  • Power Gain (Gp)
    7.4 dB
  • Polarity
    NPN
  • Supply Voltage
    36 V
  • Breakdown Voltage
    65 V (Collector Emmiter), 3 V (Emmiter base), 22 to 30 V (Collector base)
  • Leakage Current
    3 mA (Collector Emmiter)
  • Package Type
    Flanged
  • Package
    Flange Ceramic
  • RoHS
    Yes

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