PTRA095908NB

RF Transistor by MACOM (309 more products)

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The PTRA095908NB from MACOM is an RF LDMOS Transistor that operates from 925 to 960 MHz. It provides an output power (P3dB) of 520 W with a gain of 19 dB and has a drain efficiency of 52%. This FET requires a DC supply of 48 V. The PTRA095908NB is available in a thermally-enhanced plastic overmold package with an earless flange for cool and reliable operation and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    PTRA095908NB
  • Manufacturer
    MACOM
  • Description
    520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    925 to 960 MHz
  • Power
    57.16 dBm (P3dB)
  • Power(W)
    520 W (P3dB)
  • P1dB
    160 to 400 W
  • Duty_Cycle
    10 %
  • Power Gain (Gp)
    16.8 to 17.5 dB
  • Class
    AB
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Current
    500 mA
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Earless Flanged
  • Package
    PG-HB2SOF-6-1
  • RoHS
    Yes
  • Operating Temperature
    0 to 55 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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