PTRA097058NB-V1

RF Transistor by MACOM (309 more products)

Note : Your request will be directed to MACOM.

The PTRA097058NB from MACOM is an 800 W LDMOS FET that operates from 730 to 960 MHz. It is suitable for multi-standard cellular power amplifiers and delivers an output power of up to 800 W (P3dB) with a gain of more than 17 dB and efficiency of up to 55%. This transistor supports pulsed CW performance with a 10% duty cycle. It requires a DC supply of 48 V and draws up to 450 mA of current. The FET is manufactured with MACOM's advanced LDMOS process, which provides excellent thermal performance and superior reliability. It is available in a package with input and output matching, earless flanges and integrated ESD protection. The FET has been developed for wireless infrastructure applications.

Product Specifications

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Product Details

  • Part Number
    PTRA097058NB-V1
  • Manufacturer
    MACOM
  • Description
    800 W RF LDMOS Transistor from 730 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Amplifiers, Cellular
  • CW/Pulse
    CW
  • Frequency
    730 to 960 MHz
  • Power
    59.03 dBm (P3dB)
  • Power(W)
    800 W (P3dB)
  • P1dB
    500 W
  • Duty_Cycle
    10 %
  • Gain
    17.3 to 19 dB
  • Efficiency
    55 %
  • VSWR
    10 :1
  • Class
    Class AB
  • Features
    Integrated ESD protection, Low thermal resistance
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    0.07 Ohms
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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