PTVA120252MT-V1

RF Transistor by MACOM (309 more products)

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The PTVA120252MT from MACOM is an RF LDMOS FET that operates from 500 to 1400 MHz. It delivers an output power of 25 W with a linear gain of 19.5 dB and has a drain efficiency of 31.5%. This FET is manufactured on MACOM's advanced LDMOS process and provides excellent thermal performance and reliability. It is designed for use in power amplifiers and has integrated ESD protection. The transistor requires a DC supply of 48 V and draws an input current of 85 mA. It is available in a thermally-enhanced surface-mount package that measures 6 x 4 x 1 mm.

Product Specifications

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Product Details

  • Part Number
    PTVA120252MT-V1
  • Manufacturer
    MACOM
  • Description
    25 W LDMOS FET from 500 to 1400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    Telecom, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    500 to 1400 MHz
  • Power
    43.01 to 43.98 dBm
  • Power(W)
    20 to 25 W
  • P1dB
    25 W
  • Power Gain (Gp)
    18.5 to 19.5 dB
  • Efficiency
    64 %
  • Supply Voltage
    48 V
  • Voltage - Drain-Source (Vdss)
    105 V
  • Current
    40 mA
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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