PTVA120252MT-V1

RF Transistor by MACOM (309 more products)

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The PTVA120252MT from MACOM is an LDMOS FET that operates from 500 to 1400 MHz. It delivers an output power of 25 W (P1dB) with a power gain of 19.8 dB and has a drain efficiency of 64%. This transistor is manufactured on MACOM's advanced LDMOS process, which provides excellent thermal performance, and superior reliability and has integrated ESD protection. It requires a DC supply of 48 V and consumes 95 mA of current. This FET is available in a thermally-enhanced, surface-mount package (PG-SON 16) that measures 6 x 4 x 1 mm and is ideal for use in power amplifiers.

Product Specifications

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Product Details

  • Part Number
    PTVA120252MT-V1
  • Manufacturer
    MACOM
  • Description
    25 W Surface-Mount LDMOS FET from 500 to 1400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    Power Amplifiers, Telecom Infrastructure
  • Application
    Cellular, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    500 to 1400 MHz
  • Power
    44 dBm
  • Power(W)
    25 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    10 %
  • Gain
    18.5 to 19.5 dB
  • Power Added Effeciency
    65 to 70 %
  • Efficiency
    64 %
  • Supply Voltage
    0 to 55 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Drain-Source (Vdss)
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 12 V
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    2.8 Ohms
  • Thermal Resistance
    2.6 °C/W
  • Package Type
    Surface Mount
  • Package
    PG-SON-16
  • Dimension
    4 x 6 x 1 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACPR:-33.5 to -31 dBc

Technical Documents