The PXAE213708NB from MACOM is an RF LDMOS Field-Effect Transistor that operates from 2110 to 2180 MHz. It provides an output power of 400 watts with a power gain of 13.7 dB and a PAE of 60.3%, while operating from a 29 V supply. This pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. The transistor is available in a thermally enhanced package with earless flange and is ideal for use in multi-standard cellular power amplifier applications.
