PXAE261908NF

RF Transistor by MACOM (309 more products)

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The PXAE261908NF from MACOM is a Thermally-Enhanced LDMOS FET that operates from 2515 to 2675 MHz. It has been designed for multi-standard cellular power amplifier applications. The transistor delivers an output power of up to 240 W with 13.5 dB of gain and has a drain efficiency of 47.5%. This transistor is manufactured using MACOM's advanced LDMOS process to provide excellent thermal performance & superior reliability and has included input and output matching. It has an asymmetric Doherty design with a breakdown voltage of 65 V and requires a 28 V DC supply. This transistor is available in a package with an earless flange and has integrated ESD protection.

Product Specifications

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Product Details

  • Part Number
    PXAE261908NF
  • Manufacturer
    MACOM
  • Description
    240 W LDMOS Transistor from 2515 to 2675 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    2515 to 2675 MHz
  • Power
    49.54 to 53.8 dBm (P3dB)
  • Power(W)
    90 to 240 W (P3dB)
  • P1dB
    51 W
  • Gain
    12.8 to 13.5 dB
  • VSWR
    10:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Current
    450 mA
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    0.03 to 0.08 Ohms
  • Package Type
    Earless Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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