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0912GN-120E

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The 0912GN-120E from Microchip Technology is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 50.79 dBm, Power(W) 119.95 W, Power Gain (Gp) 17.8 to 18.4 dB, VSWR 5.00:1. Tags: Die. More details for 0912GN-120E can be seen below.

Product Specifications

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Product Details

  • Part Number
    0912GN-120E
  • Manufacturer
    Microchip Technology
  • Description
    E-Series GaN Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, ISM, Avionics
  • Application
    ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • CW Power
    25 W
  • Pulsed Power
    25 W
  • Pulsed Width
    32 1 us
  • Power Gain (Gp)
    17.8 to 18.4 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    2 mA
  • Package Type
    Die
  • Package
    55-QQ
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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