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1011GN-800V

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The 1011GN-800V from Microchip Technology is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 59.03 to 59.34 dBm, Power(W) 859.01 W, Duty_Cycle 0.02, Power Gain (Gp) 19 to 19.35 dB. Tags: Die. More details for 1011GN-800V can be seen below.

Product Specifications

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Product Details

  • Part Number
    1011GN-800V
  • Manufacturer
    Microchip Technology
  • Description
    52 Volts, 1030/1090 MHz IFF & Mode-S ELM

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    59.03 to 59.34 dBm
  • Power(W)
    859.01 W
  • Pulsed Power
    800 to 860 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    19 to 19.35 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    52 V
  • Drain Bias Current
    64 mA
  • Thermal Resistance
    0.07 C/W
  • Package Type
    Die
  • Package
    55-KP
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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