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2731-100M

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The 2731-100M from Microchip Technology is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 50 to 51.46 dBm, Power(W) 139.96 W, Duty_Cycle 0.1, Power Gain (Gp) 8 to 9.4 dB. Tags: Flanged. More details for 2731-100M can be seen below.

Product Specifications

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Product Details

  • Part Number
    2731-100M
  • Manufacturer
    Microchip Technology
  • Description
    100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    50 to 51.46 dBm
  • Power(W)
    139.96 W
  • Pulsed Power
    100 to 140 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    8 to 9.4 dB
  • Input Return Loss
    -7 dB
  • VSWR
    3.00:1, 1.50:1
  • Collector Emmiter Voltage
    65 V
  • Supply Voltage
    36 V
  • Input Power
    16 W
  • Thermal Resistance
    0.43 C/W
  • Package Type
    Flanged
  • Package
    55KS-1
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents
View details on the manufacturer's website
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