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3135GN-280LV

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The 3135GN-280LV from Microchip Technology is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 54.47 to 55.19 dBm, Power(W) 330.37 W, Duty_Cycle 0.2, Power Gain (Gp) 13 to 13.7 dB. Tags: Flanged. More details for 3135GN-280LV can be seen below.

Product Specifications

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Product Details

  • Part Number
    3135GN-280LV
  • Manufacturer
    Microchip Technology
  • Description
    280 Watts, 50 Volts, 200 us, 20% S-Band Radar 3100 - 3500 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    54.47 to 55.19 dBm
  • Power(W)
    330.37 W
  • Pulsed Power
    280 to 330 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    13 to 13.7 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    36 mA
  • Thermal Resistance
    0.39 C/W
  • Package Type
    Flanged
  • Package
    55-KR
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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