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GAN_1030_1090MHZ_1200W

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The GAN_1030_1090MHZ_1200W from Microchip Technology is a RF Transistor with Frequency 1030 to 1090 MHz, Power 60.79 dBm, Power(W) 1200 W, Duty_Cycle 2%, Power Gain (Gp) 18.5 dB. Tags: Ceramic. More details for GAN_1030_1090MHZ_1200W can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_1030_1090MHZ_1200W
  • Manufacturer
    Microchip Technology
  • Description
    1200 W, GaN Transistor from 1030 to 1090 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Avionics
  • CW/Pulse
    CW
  • Frequency
    1030 to 1090 MHz
  • Power
    60.79 dBm
  • Power(W)
    1200 W
  • Pulsed Width
    32 uSec
  • Duty_Cycle
    2%
  • Power Gain (Gp)
    18.5 dB
  • Efficiency
    75%
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military
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