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Note : Your request will be directed to Microchip Technology.
The MS3022 from Microchip Technology is a RF Transistor with Frequency 1 to 2 GHz, Power 30 dBm, Power(W) 1 W, Power Gain (Gp) 7 dB, Supply Voltage 28 V. Tags: 2-Hole Flanged. More details for MS3022 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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