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MGF1941AL

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The MGF1941AL from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 12 GHz, Power 15 dBm, Power(W) 0.03 W, P1dB 11 dBm, Gain 9 dB. Tags: Flanged. More details for MGF1941AL can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF1941AL
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 12 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    Ku Band, S Band
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    15 dBm
  • Power(W)
    0.03 W
  • P1dB
    11 dBm
  • Gain
    9 dB
  • Power Gain (Gp)
    7 to 10 dB
  • Noise Figure
    1.2 dB
  • Supply Voltage
    3 V
  • Breakdown Voltage
    -3.5 V (Gate Drain)
  • Drain Bias Current
    30 mA
  • Quiescent Drain Current
    30 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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