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MGF4841AL

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The MGF4841AL from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 12 GHz, Power 16 dBm, Power(W) 0.04 W, P1dB 11 dBm, Saturated Power 13 to 16 dBm. Tags: Flanged. More details for MGF4841AL can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF4841AL
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 12 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    S Band, K Band
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    16 dBm
  • Power(W)
    0.04 W
  • P1dB
    11 dBm
  • Saturated Power
    13 to 16 dBm
  • Power Gain (Gp)
    9 to 11.5 dB
  • Supply Voltage
    2.5 V
  • Drain Bias Current
    25 mA
  • Quiescent Drain Current
    25 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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