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The MGFK45G3745A from Mitsubishi Electric is a GaN HEMT that operates from 13.75 to 14.5 GHz. It delivers an output power of 30 W with a power gain of 9.5 dB and has a power added efficiency (PAE) of 30%. The transistor has an N-channel Schottky gate and is designed for use in Class AB linear amplifiers. It is available in an internally matched surface-mount GF-68 package that measures 21.0 x 12.9 x 4.0 mm and requires a DC supply of 24 V. The transistor is ideal for use as an amplifier in Ku-band satellite communication (SATCOM) earth stations.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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