The MGFK48G2732A from Mitsubishi Electric is a GaN High-Electron-Mobility Transistor (HEMT) that operates from 12.75 to 13.25 GHz. It delivers an output power of 70 W with a linear power gain of 11 dB and a power added efficiency (PAE) of 31%. This transistor has an N-channel Schottky gate design and is suitable for use in Class AB linear amplifiers. It supports multi-carrier communication with increased data-transmission capacity. The HEMT requires a DC supply of 24 V and consumes 1.44 A of current. It is available in a surface-mount package that measures 21.0 x 12.9 mm and is ideal for use in satellite communication (SATCOM) earth station applications.
