The MGFS37G38L2-01 from Mitsubishi Electric is a GaN HEMT that operates from 2.5 to 3.8 GHz. It provides a saturated output power of up to 37 dBm with a gain of 18 dB and has a typical drain efficiency of up to 60%. The device requires a voltage of 55 V and can handle up to 27 dBm of input power. The transistor is available in a GF-67 package that measures 7.2 x 6.6 mm and is ideal for S-band transmitter applications.
