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The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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