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RD10MMS2

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The RD10MMS2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 870 MHz, Power 39.54 to 40 dBm, Power(W) 10 W, Supply Voltage 7.2 V, Input Power 1 W. Tags: Flanged. More details for RD10MMS2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD10MMS2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 870 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 870 MHz
  • Power
    39.54 to 40 dBm
  • Power(W)
    10 W
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    1.6 to 2.8 V
  • Input Power
    1 W
  • Drain Bias Current
    0.02 mA
  • Quiescent Drain Current
    300 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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