The MwT-11F from MicroWave Technology is GaAs MESFET that provides a small signal gain of 9 dB and a P1dB of 32 dBm at 8 GHz with a PAE of 40%. It has a nominal gate length of 0.25-micron and 2400 microns gate width. This GaAs MESFET is ideally suited for applications requiring high power. It is available as a die that measures 780 x 345 x 100 µm and is passivated with SiN (Silicon Nitride). This High Linearity GaAs FET is ideal for commercial, military, hi-rel space applications.
