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MwT-1F

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MwT-1F Image

The MwT-1F from MicroWave Technology is a RF Transistor with Frequency DC to 12 GHz, Power 26 dBm, Power(W) 0.4 W, P1dB 25 to 26 dBm, OIP3 35 to 37 dBm. Tags: Chip. More details for MwT-1F can be seen below.

Product Specifications

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Product Details

  • Part Number
    MwT-1F
  • Manufacturer
    MicroWave Technology
  • Description
    GaAs FET for Military & Space Applications Up to 12 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Commercial, Military, Space, Wireless Infrastructure
  • Application Type
    Commercial, Military, Space
  • Application
    Commercial, Military
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    26 dBm
  • Power(W)
    0.4 W
  • P1dB
    25 to 26 dBm
  • OIP3
    35 to 37 dBm
  • Gain
    7 dB
  • Small Signal Gain
    9 to 10 dB
  • Power Added Effeciency
    35%
  • Noise Figure
    2 dB
  • Transconductance
    80 to 100 mS
  • Supply Voltage
    3 to 7 V
  • Drain Gate Voltage
    -16 to -15 V
  • Voltage - Gate-Source (Vgs)
    -17 to -16 V
  • Thermal Resistance
    65 to 165 Degree C/W
  • Package Type
    Chip
  • Dimension
    775 x 260 x 100 um
  • Grade
    Commercial, Military, Space
  • Tags
    AlGaAs/InGaAs

Technical Documents
View details on the manufacturer's website
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