The A2G22S190-01S from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 1800 to 2200 MHz. This class AB transistor delivers an output power of 36 watts with a power gain of over 16.5 dB and has a drain efficiency of 36.2%. It requires a DC supply of 48 V and consumes a current of up to 200 mA.
The device features high terminal impedances for optimal broadband performance. It is RoHS-compliant and is available in a NI-400S-2S package. This transistor is ideal for use in cellular base stations and digital pre-distortion error correction systems for wireless applications.
