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  6. A2I25H060N

The A2I25H060N from NXP Semiconductors is a RF Transistor with Frequency 2.3 to 2.69 GHz, Power 40.21 dBm, Power(W) 10.5 W, Duty_Cycle 0.1, Power Gain (Gp) 24.6 to 28 dB. Tags: Flanged. More details for A2I25H060N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2I25H060N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor 1880-2025 MHz, 58 W Avg., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.3 to 2.69 GHz
  • Power
    40.21 dBm
  • Power(W)
    10.5 W
  • CW Power
    36 to 55 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    24.6 to 28 dB
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 10 Vdc
  • Drain Efficiency
    0.404
  • Drain Current
    26 to 163 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.2 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WB--17 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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