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  6. A3G22H400-04S

The A3G22H400-04S from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 2.2 GHz, Power 48.97 dBm, Power(W) 79 W, Power Gain (Gp) 14.3 to 17.3 dB, Supply Voltage 48 Vdc. Tags: Flanged. More details for A3G22H400-04S can be seen below.

Product Specifications

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Product Details

  • Part Number
    A3G22H400-04S
  • Manufacturer
    NXP Semiconductors
  • Description
    1800 to 2200 MHz, 79 W AVG., 48 V, AIRFAST RF Power GaN Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    WCDMA
  • Application
    Cellular, Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    1.8 to 2.2 GHz
  • Power
    48.97 dBm
  • Power(W)
    79 W
  • Power Gain (Gp)
    14.3 to 17.3 dB
  • Class
    C, AB
  • Supply Voltage
    48 Vdc
  • Threshold Voltage
    -3.8 to -2.3 Vdc(Gate Threshold Voltage)
  • Breakdown Voltage
    150 Vdc(Gate Source)
  • Voltage - Drain-Source (Vdss)
    125 Vdc
  • Voltage - Gate-Source (Vgs)
    -8 to 0 Vdc
  • Quiescent Drain Current
    200 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Forward Current : 49 mA, Gate Source Leakage Current : -5.85 mAdc, P3 dB : 400 W

Technical Documents
View details on the manufacturer's website
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