The AFM906N from NXP Semiconductors is an airfast RF power LDMOS transistor that operates from 136 to 941 MHz. The Transistor provides an output power of 6.5 watts and a gain of 16.2 dB with an efficiency of 62%. It requires a supply voltage from 7.5 V DC and has a VSWR of 65:1. The AFM906N is ideal for large-signal, common-source amplifier applications in handheld radio equipment.
