The AFM907N from NXP Semiconductors is a RF Transistor with Frequency 136 to 941 MHz, Power 39.03 dBm, Power(W) 8 W, P1dB 39 dBm, Power Gain (Gp) 20.7 dB. Tags: Surface Mount. More details for AFM907N can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AFM907N
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTOR 136-941 MHz, 7 W, 7.5 V WIDEBAND

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    136 to 941 MHz
  • Power
    39.03 dBm
  • Power(W)
    8 W
  • CW Power
    8 W
  • P1dB
    39 dBm
  • Power Gain (Gp)
    20.7 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.739
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.9 °C/W
  • Package Type
    Surface Mount
  • Package
    DFN 4 x 6
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents