The AFT09MP055GN from NXP Semiconductors is a RF Transistor with Frequency 764 to 941 MHz, Power 47.4 dBm, Power(W) 54.95 W, P1dB 47.6 dBm, Power Gain (Gp) 17.5 dB. Tags: Flanged. More details for AFT09MP055GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFT09MP055GN
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    764 to 941 MHz
  • Power
    47.4 dBm
  • Power(W)
    54.95 W
  • CW Power
    55 W
  • P1dB
    47.6 dBm
  • Power Gain (Gp)
    17.5 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.69
  • Drain Current
    550 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.32 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WB--4 GULL
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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