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  6. AFT09MS031GN

The AFT09MS031GN from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 941 MHz, Power 44.91 dBm, Power(W) 30.97 W, P1dB 44.9 dBm, Power Gain (Gp) 17.2 dB. Tags: Flanged. More details for AFT09MS031GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFT09MS031GN
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    1.8 to 941 MHz
  • Power
    44.91 dBm
  • Power(W)
    30.97 W
  • CW Power
    31 W
  • P1dB
    44.9 dBm
  • Power Gain (Gp)
    17.2 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    13.6 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 12 Vdc
  • Drain Efficiency
    0.71
  • Drain Current
    500 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.63 °C/W
  • Package Type
    Flanged
  • Package
    TO--270--2 GULL PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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