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  6. AFV10700S

The AFV10700S from NXP Semiconductors is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 58.45 dBm, Power(W) 699.84 W, P1dB 58.5 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for AFV10700S can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFV10700S
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTORS 1030-1090 MHz, 700 W PEAK, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, Wireless Infrastructure, Avionics
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    58.45 dBm
  • Power(W)
    699.84 W
  • P1dB
    58.5 dBm
  • Peak Output Power
    700 to 800 W
  • Pulsed Power
    700 to 800 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 21 dB
  • Input Return Loss
    -15 to -9 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.585
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.03 °C/W
  • Package Type
    Flanged
  • Package
    NI--780S--4L
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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