The MHE1003N from NXP is a RF Power LDMOS Transistor that operates from 2400 to 2500 MHz. This transistor has been developed for use in consumer and commercial cooking applications. It provides up to 230 watts of CW power with a gain of over 11.5 dB and has a PAE of 62%. This device requires a 26 V supply and is internally matched to 50 ohms. The Transistor has an operating temperature rating of 150 C and die temperature rating of 225 C. The RoHS complaint transistor also has integrated ESD protection.
